We present a triple junction high power laser diode at 1550nm based on AlInGaAs/InP material system. The device was developed, fabricated, and tested. The laser stacks three AlInGaAs lasers epitaxially connected by two tunnel junctions and grown on InP substrate. Three monolithic laser structures with tunnel junction layers are designed to reduce. With the technology development, it is highly desirable to enhance the power and brightness of a 1550 pulsed laser in order to increase the detectable distance and improve the spatial resolution. Modeled absorption loss, band structure, and distributed feedback grating designs. Summers 2015, 2016 Engineering Intern, Xallent LLC. In nitride-based laser diodes, the poor conductivity of the p-type region, higher light absorption, and the difficult processing of an ohmic p-contact with low resistance are major challenges.
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